New concept for the lateral DMOS transistor for smart power IC's

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 73-76

  Zitouni, M ^a   Morancho, F ^a   Rossel, P ^a   Tranduc, H ^a   Buxo, J ^a   Pages, I ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; OXIDES; POWER ELECTRONICS;

BREAKDOWN VOLTAGE; DIE SIZE REDUCTION; SMART POWER INTEGRATED CIRCUITS;

MOSFET DEVICES;

EID: 0032598946     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)