Trench lateral power MOSFET using self-aligned trench bottom contact holes

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 359-362

  Fujishima, Naoto ^a   Salama, C Andre T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SELF ALIGNED TRENCH BOTTOM CONTACT HOLES;

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

MOSFET DEVICES;

EID: 84886448126     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)