Clustered insulated gate bipolar transistor: A new power semiconductor device

IEE Proceedings: Circuits, Devices and Systems

Volumn 148, Issue 2, 2001, Pages 75-78

  Sweet, M ^a   Spulber, O ^a   Subhas Chandra Bose, J V ^a   Ngwendson, L ^a   Vershinin, K V ^a   De Souza, M M ^a   Narayanan, E M S ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; MOSFET DEVICES; SWITCHING CIRCUITS; THRESHOLD VOLTAGE; THYRISTORS;

POWER SEMICONDUCTOR DEVICES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0035302845     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20010168     Document Type: Article

References (15)

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