Novel area efficient floating field limiting ring edge termination technique

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1381-1386

  De Souza, M M ^a   Subhas Chandra Bose, J V ^a   Sankara Narayanan, E M ^a   Pease, T J ^b   Ensell, G ^b   Humphreys, J ^b  

^a Emerging Technol Research Centre   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

FLOATING RING EDGE TERMINATION STRUCTURES;

MOSFET DEVICES;

EID: 0342484437     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00077-0     Document Type: Article

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