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Volumn , Issue , 2008, Pages 1787-1792

Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CELLULAR RADIO SYSTEMS; COMPOSITE MICROMECHANICS; COMPUTER NETWORKS; ELECTRON BEAM LITHOGRAPHY; ETCHING; MEMS; MICROELECTROMECHANICAL DEVICES; PRESSURE DROP; SILICON; THREE DIMENSIONAL;

EID: 51349150845     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2008.4550223     Document Type: Conference Paper
Times cited : (20)

References (13)
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  • 2
    • 51349110571 scopus 로고    scopus 로고
    • Polyakov A., Wafer-level packaing technology for RF applications based on a rigid low-loss spacer substrate, Delft University of Technology Ph.D thesis, the Netherlands, 2006, pp. 71-92.
    • Polyakov A., " Wafer-level packaing technology for RF applications based on a rigid low-loss spacer substrate", Delft University of Technology Ph.D thesis, the Netherlands, 2006, pp. 71-92.
  • 3
    • 51349156691 scopus 로고    scopus 로고
    • Tian J., Jannacci I., Gaddi R., and Bartek M., RF-MEMS Wafer-Level Packaging Using Through-Wafer Interconnect, Proc. Eurosensors 2006, pp. T2C-P7/1-4.
    • Tian J., Jannacci I., Gaddi R., and Bartek M., "RF-MEMS Wafer-Level Packaging Using Through-Wafer Interconnect", Proc. Eurosensors 2006, pp. T2C-P7/1-4.
  • 5
    • 15544378397 scopus 로고    scopus 로고
    • Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures
    • Chang C. L., Wang Y. F., et al., "Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures", J. Micromech. and Microeng, Vol. 15, 2005, pp 580-585.
    • (2005) J. Micromech. and Microeng , vol.15 , pp. 580-585
    • Chang, C.L.1    Wang, Y.F.2
  • 6
    • 0032753082 scopus 로고    scopus 로고
    • Ayon A. A., Braff R., Lin C. C., Sawin H. H., and Schmidt M. A., Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher, J. Eletrochem. Sco, 146(1) 1999, pp. 339-349.
    • Ayon A. A., Braff R., Lin C. C., Sawin H. H., and Schmidt M. A., "Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher", J. Eletrochem. Sco, 146(1) 1999, pp. 339-349.
  • 7
    • 0001197855 scopus 로고
    • Microscopic ununiformity in plasma etching
    • Gottscho R. A. and. Jurgensen C. W, "Microscopic ununiformity in plasma etching", J. Vac. Sci. Technol. B. 10(5) (1992), pp. 2133-2147.
    • (1992) J. Vac. Sci. Technol. B , vol.10 , Issue.5 , pp. 2133-2147
    • Gottscho, R.A.1    Jurgensen, C.W.2
  • 8
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    • US Patent 5,501,893, March 26
    • Lärmer F. et al., US Patent 5,501,893, March 26, 1996.
    • (1996)
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  • 10
    • 36549100931 scopus 로고    scopus 로고
    • Low-temperature reactive ion etching and microwave plasma etching of silicon
    • Tachi S., Tsujimoto K. and Okudaira S., "Low-temperature reactive ion etching and microwave plasma etching of silicon", Appl. Phys. Lett., Vol 52, No.8, 1998, pp. 616-618.
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  • 11
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    • Development of cost-effective high-density through-wafer interconnects for 3D microsystems
    • Lietaer N., Storas P., Breivik L. and Moe S., "Development of cost-effective high-density through-wafer interconnects for 3D microsystems", J. Micromech. Microeng, 16 (2006) S29-S34
    • (2006) J. Micromech. Microeng , vol.16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.