An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7950-7954

  Sungthong, A ^a   Porntheeraphat, S ^b   Poyai, A ^b   Nukeaw, J ^a  

^a KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

^b NATIONAL ELECTRONICS AND COMPUTER TECHNOLOGY CENTER   (Thailand)

Author keywords

Indium nitride; Indium oxide; Indium oxynitride; Reactive gas timing; RF magnetron sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY GAP; GASES; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; NITRIDES; NITROGEN; NUMERICAL METHODS; OPTICAL BAND GAPS; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; THIN FILMS; TIMING CIRCUITS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM NITRIDE; INDIUM OXIDE; OXYNITRIDES; REACTIVE GAS; RF-MAGNETRON SPUTTERING;

INDIUM COMPOUNDS;

EID: 51249103607     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.038     Document Type: Article

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