Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation

2007 European Conference on Power Electronics and Applications, EPE

Volumn , Issue , 2007, Pages

  Benmansour, A ^a   Azzopardi, S ^a   Martin, J C ^a   Woirgard, E ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Clamped inductive switching; IGBT; Power semiconductor device; Simulation

Indexed keywords

ACTIVE FILTERS; BIPOLAR TRANSISTORS; FAILURE ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PHOTOLITHOGRAPHY; POWER ELECTRONICS; QUALITY ASSURANCE;

CLAMPED INDUCTIVE SWITCHING; IGBT; POWER SEMICONDUCTOR DEVICE; SIMULATION; TURN-OFF;

SWITCHING;

EID: 51049115514     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPE.2007.4417488     Document Type: Conference Paper

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