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Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 598-603

A new analytical model for the energy dispersion in two-dimensional hole inversion layers

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL EFFICIENCY; COMPUTER SIMULATION; MATHEMATICAL MODELS; PARAMETER ESTIMATION;

EID: 34047248348     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.006     Document Type: Article
Times cited : (3)

References (11)
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    • Tsutsui G., Saitoh M., and Hiramoto T. Experimental study on superior mobility in [1 1 0]-oriented UTB SOI pMOSFETs. IEEE Elect Dev Lett 26 11 (2005) 836-838
    • (2005) IEEE Elect Dev Lett , vol.26 , Issue.11 , pp. 836-838
    • Tsutsui, G.1    Saitoh, M.2    Hiramoto, T.3
  • 3
    • 0000363279 scopus 로고    scopus 로고
    • Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs
    • Oberhuber R., Zandler G., and Vogl P. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs. Phys Rev B 58 15 (1998) 9941-9948
    • (1998) Phys Rev B , vol.58 , Issue.15 , pp. 9941-9948
    • Oberhuber, R.1    Zandler, G.2    Vogl, P.3
  • 4
    • 0043269756 scopus 로고    scopus 로고
    • Six-band k · p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness
    • Fischetti M.V., Ren Z., Solomon P.M., Yang M., and Rim K. Six-band k · p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness. J Appl Phys 94 2 (2003) 1079-1095
    • (2003) J Appl Phys , vol.94 , Issue.2 , pp. 1079-1095
    • Fischetti, M.V.1    Ren, Z.2    Solomon, P.M.3    Yang, M.4    Rim, K.5
  • 5
    • 33751542537 scopus 로고    scopus 로고
    • Lucci L, Palestri P, Esseni D, Selmi L. Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration. In: IEEE IEDM technical digest. 2005. p. 631-4.
  • 6
    • 34047245595 scopus 로고    scopus 로고
    • De Michielis M, Esseni D, Palestri P, Selmi L. A new analytical model for the energy dispersion in 2D hole inversion layers. In: Proceedings workshop ULIS. 2006. p. 81-4.
  • 7
    • 36449003566 scopus 로고
    • Valence energy-band structure for strained group-IV semiconductors
    • Manku T., and Nathan A. Valence energy-band structure for strained group-IV semiconductors. J Appl Phys 73 3 (1993) 1205-1213
    • (1993) J Appl Phys , vol.73 , Issue.3 , pp. 1205-1213
    • Manku, T.1    Nathan, A.2
  • 8
    • 85032069152 scopus 로고
    • Electronic properties of two-dimensional systems
    • Ando T., Fowler A., and Stern F. Electronic properties of two-dimensional systems. Rev Mod Phys 54 (1982) 437-673
    • (1982) Rev Mod Phys , vol.54 , pp. 437-673
    • Ando, T.1    Fowler, A.2    Stern, F.3
  • 9
    • 0027692894 scopus 로고
    • Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
    • Jungemann C., Edmunds A., and Engl W.L. Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers. Solid State Electron 36 11 (1993) 1529-1540
    • (1993) Solid State Electron , vol.36 , Issue.11 , pp. 1529-1540
    • Jungemann, C.1    Edmunds, A.2    Engl, W.L.3
  • 10
    • 4243227379 scopus 로고
    • Monte Carlo study of electron transport in silicon inversion layers
    • Fischetti M.V., and Laux S.E. Monte Carlo study of electron transport in silicon inversion layers. Phys Rev B 48 4 (1993) 2244-2274
    • (1993) Phys Rev B , vol.48 , Issue.4 , pp. 2244-2274
    • Fischetti, M.V.1    Laux, S.E.2
  • 11
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    • Explaining the dependences of the hole and electron mobilities in Si inversion layers
    • Pirovano A., Lacaita A.L., Zandler G., and Oberhuber R. Explaining the dependences of the hole and electron mobilities in Si inversion layers. IEEE Trans Elect Dev 47 4 (2000) 718-724
    • (2000) IEEE Trans Elect Dev , vol.47 , Issue.4 , pp. 718-724
    • Pirovano, A.1    Lacaita, A.L.2    Zandler, G.3    Oberhuber, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.