-
1
-
-
27744592434
-
Experimental study on superior mobility in [1 1 0]-oriented UTB SOI pMOSFETs
-
Tsutsui G., Saitoh M., and Hiramoto T. Experimental study on superior mobility in [1 1 0]-oriented UTB SOI pMOSFETs. IEEE Elect Dev Lett 26 11 (2005) 836-838
-
(2005)
IEEE Elect Dev Lett
, vol.26
, Issue.11
, pp. 836-838
-
-
Tsutsui, G.1
Saitoh, M.2
Hiramoto, T.3
-
2
-
-
15044363452
-
[1 1 0]-surface strained-SOI CMOS devices
-
Mizuno T., Sugiyama N., Tezuka T., Moriyama Y., Nakaharai S., and Takagi S. [1 1 0]-surface strained-SOI CMOS devices. IEEE Trans Elect Dev 52 3 (2005) 367-374
-
(2005)
IEEE Trans Elect Dev
, vol.52
, Issue.3
, pp. 367-374
-
-
Mizuno, T.1
Sugiyama, N.2
Tezuka, T.3
Moriyama, Y.4
Nakaharai, S.5
Takagi, S.6
-
3
-
-
0000363279
-
Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs
-
Oberhuber R., Zandler G., and Vogl P. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs. Phys Rev B 58 15 (1998) 9941-9948
-
(1998)
Phys Rev B
, vol.58
, Issue.15
, pp. 9941-9948
-
-
Oberhuber, R.1
Zandler, G.2
Vogl, P.3
-
4
-
-
0043269756
-
Six-band k · p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness
-
Fischetti M.V., Ren Z., Solomon P.M., Yang M., and Rim K. Six-band k · p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness. J Appl Phys 94 2 (2003) 1079-1095
-
(2003)
J Appl Phys
, vol.94
, Issue.2
, pp. 1079-1095
-
-
Fischetti, M.V.1
Ren, Z.2
Solomon, P.M.3
Yang, M.4
Rim, K.5
-
5
-
-
33751542537
-
-
Lucci L, Palestri P, Esseni D, Selmi L. Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration. In: IEEE IEDM technical digest. 2005. p. 631-4.
-
-
-
-
6
-
-
34047245595
-
-
De Michielis M, Esseni D, Palestri P, Selmi L. A new analytical model for the energy dispersion in 2D hole inversion layers. In: Proceedings workshop ULIS. 2006. p. 81-4.
-
-
-
-
7
-
-
36449003566
-
Valence energy-band structure for strained group-IV semiconductors
-
Manku T., and Nathan A. Valence energy-band structure for strained group-IV semiconductors. J Appl Phys 73 3 (1993) 1205-1213
-
(1993)
J Appl Phys
, vol.73
, Issue.3
, pp. 1205-1213
-
-
Manku, T.1
Nathan, A.2
-
8
-
-
85032069152
-
Electronic properties of two-dimensional systems
-
Ando T., Fowler A., and Stern F. Electronic properties of two-dimensional systems. Rev Mod Phys 54 (1982) 437-673
-
(1982)
Rev Mod Phys
, vol.54
, pp. 437-673
-
-
Ando, T.1
Fowler, A.2
Stern, F.3
-
9
-
-
0027692894
-
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
-
Jungemann C., Edmunds A., and Engl W.L. Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers. Solid State Electron 36 11 (1993) 1529-1540
-
(1993)
Solid State Electron
, vol.36
, Issue.11
, pp. 1529-1540
-
-
Jungemann, C.1
Edmunds, A.2
Engl, W.L.3
-
10
-
-
4243227379
-
Monte Carlo study of electron transport in silicon inversion layers
-
Fischetti M.V., and Laux S.E. Monte Carlo study of electron transport in silicon inversion layers. Phys Rev B 48 4 (1993) 2244-2274
-
(1993)
Phys Rev B
, vol.48
, Issue.4
, pp. 2244-2274
-
-
Fischetti, M.V.1
Laux, S.E.2
-
11
-
-
0033904357
-
Explaining the dependences of the hole and electron mobilities in Si inversion layers
-
Pirovano A., Lacaita A.L., Zandler G., and Oberhuber R. Explaining the dependences of the hole and electron mobilities in Si inversion layers. IEEE Trans Elect Dev 47 4 (2000) 718-724
-
(2000)
IEEE Trans Elect Dev
, vol.47
, Issue.4
, pp. 718-724
-
-
Pirovano, A.1
Lacaita, A.L.2
Zandler, G.3
Oberhuber, R.4
|