PLASMA DOPING INTO THE SIDE-WALL OF A SUB-0. 5 mu m WIDTH TRENCH.

Conference on Solid State Devices and Materials

Volumn , Issue , 1987, Pages 319-322

  Mizuno, Bunji ^a   Nakayama, Ichiroh ^a   Aoi, Nobuo ^a   Kubota, Masafumi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

GLOW DISCHARGES; PLASMAS; SEMICONDUCTOR MATERIALS - DOPING;

ECR PLASMA SOURCE; ELECTRON CYCLOTRON RESONANCE (ECR); PLASMA DOPING; SUB-HALF MICRON TRENCH; VERTICAL SIDEWALL; WAFER TEMPERATURE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0023559501     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)