Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1674-1679

  Han, Dae Seob ^a   Asryan, Levon V ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

Quantum dot lasers; Semiconductor heterojunctions; Tunneling

Indexed keywords

ATOMS; EXCAVATION; INJECTION (OIL WELLS); LASERS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WIRES; THRESHOLD CURRENT DENSITY; TUNNELING (EXCAVATION);

CHARACTERISTIC TEMPERATURES; ELECTRON-HOLE PAIRS; LASER STRUCTURING; OPTICAL CONFINEMENT LAYERS; QUANTUM DOT LASERS; QUANTUM DOTS; QUANTUM WELLS; SEMICONDUCTOR HETEROJUNCTIONS; THEORETICAL MODEL; TUNNELING; TUNNELING LEAKAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 50849099149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.012     Document Type: Article

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