High-speed tunnel-injection quantum well and quantum dot lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3283, Issue , 1998, Pages 702-709

  Bhattacharya, Pallab ^a   Zhang, Xiangkun ^b   Yuan, Yahsing ^c   Kamath, Kishore K ^a   Klotzkin, David ^a   Caneau, Catherine ^d   Bhat, Rajaram J ^d  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c MOTOROLA INC   (United States)

^d Corning Inc ^*  (United States)

Author keywords

Modulation bandwidth; Quantum dots; Quantum well lasers

Indexed keywords

BANDWIDTH; CIVIL AVIATION; LASERS; MODULATION; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SURFACE EMITTING LASERS; TELECOMMUNICATION SYSTEMS; TUNNELING (EXCAVATION);

AUGER RECOMBINATIONS; CARRIER EFFECTS; CARRIER INJECTIONS; CARRIER LEAKAGES; CAVITY SURFACES; DIFFERENTIAL GAINS; GAIN MEDIAS; HIGH SPEED LASERS; INNOVATIVE APPROACHES; LIMITING EFFECTS; LOW THRESHOLDS; MATERIAL SYSTEMS; MODULATION BANDWIDTH; ORGANIZED GROWTHS; QUANTUM BOX LASERS; QUANTUM BOXES; QUANTUM DOTS; QUANTUM WELLS; QUANTUM-DOT LASERS; SEMI-CONDUCTORS; SIGNIFICANT REDUCTIONS; SMALL SIGNALS; SUB BANDS; TEMPERATURE DEPENDENCES; TUNNELING INJECTIONS;

QUANTUM WELL LASERS;

EID: 46049092522     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.316722     Document Type: Conference Paper

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