Device performance evaluation of PMOS devices fabricated by B2H6 PIII/PLAD process on poly-Si gate doping

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 68-72

  Qin, Shu ^a   McTeer, Allen ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GATES (TRANSISTOR); ION IMPLANTATION; POLYSILICON; THRESHOLD VOLTAGE;

BEAM LINE SYSTEMS; GATE DOPING; GATE RESISTANCE; PMOS DEVICES;

MOS DEVICES;

EID: 33846211783     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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