Faraday/Ion mass spectroscopy dosimeter for plasma immersion ion implantation/plasma doping processes of semiconductor manufacturing

IEEE Transactions on Plasma Science

Volumn 36, Issue 3 PART 2, 2008, Pages 828-833

  Qin, Shu ^a   McTeer, Allen ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

Dosimetry measurement; Faraday cup ion mass spectroscopy (IMS); Plasma doping (PLAD); Plasma immersion ion implantation (PIII)

Indexed keywords

BORON; BORON COMPOUNDS; DOSIMETERS; DOSIMETRY; ION BOMBARDMENT; ION IMPLANTATION; MASS SPECTROMETERS; MASS SPECTROMETRY; NONMETALS; PLASMA APPLICATIONS; PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

CLOSE-LOOP CONTROL; DOSIMETRY MEASUREMENT; FARADAY CUP/ION MASS SPECTROSCOPY (IMS); IN-SITU; MASS SPECTROSCOPY; MULTI-SPECIES; PLASMA DOPING; PLASMA DOPING (PLAD); PLASMA IMMERSION; PLASMA IMMERSION ION IMPLANTATION; PLASMA IMMERSION ION IMPLANTATION (PIII); SEMICONDUCTOR MANUFACTURING;

PLASMAS;

EID: 45949083496     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2008.923741     Document Type: Article

References (13)

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