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Volumn , Issue , 2008, Pages 32-38

Ultra shallow junctions fabrication by Plasma Immersion Implantation on PULSION® followed by different annealing processes

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; ION BOMBARDMENT; ION IMPLANTATION; PLASMA APPLICATIONS; SILICON;

EID: 50849096107     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2008.4540012     Document Type: Conference Paper
Times cited : (3)

References (15)
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    • ITRS International Technology Roadmap for Semiconductors 2005
  • 2
    • 0030288186 scopus 로고    scopus 로고
    • Plasma ion immersion implantation- a fledging technique for semiconductor processing
    • P.K Chu et al: Plasma ion immersion implantation- a fledging technique for semiconductor processing. Materials Science and engineering, R17 1996 207-280
    • (1996) Materials Science and engineering , vol.R17 , pp. 207-280
    • Chu, P.K.1
  • 4
    • 0002568355 scopus 로고    scopus 로고
    • Ion Implantation by plasma immersion: Interest, limitations and perspectives
    • F.Le Coeur et al: Ion Implantation by plasma immersion: interest, limitations and perspectives. Surf. Coat. Technol. 125 (2000) 71-78
    • (2000) Surf. Coat. Technol , vol.125 , pp. 71-78
    • Coeur, F.L.1
  • 6
    • 50749136154 scopus 로고    scopus 로고
    • ème cycle soutenue le 13/12/2000.
    • ème cycle soutenue le 13/12/2000.
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    • 50849129666 scopus 로고    scopus 로고
    • V.Vervisch et al, IIT 2006.
    • , vol.IIT 2006
    • Vervisch, V.1
  • 12
    • 50849111822 scopus 로고    scopus 로고
    • V.N. Faifer M.I. Current, USJ-05, Daytona Beach, FL, June 5-8, 2005; JVST-B 24(1) (Jan/Feb 06) 414-420.
    • V.N. Faifer M.I. Current, USJ-05, Daytona Beach, FL, June 5-8, 2005; JVST-B 24(1) (Jan/Feb 06) 414-420.
  • 13
    • 33749999241 scopus 로고    scopus 로고
    • Characterization of Ultra-shallow Junctions Using Frequency-dependent Junction Photo-voltage and Its Lateral Attenuation
    • V.N.Faifer at al "Characterization of Ultra-shallow Junctions Using Frequency-dependent Junction Photo-voltage and Its Lateral Attenuation" Appl. Phys. Let.,89,151123 (2006).
    • (2006) Appl. Phys. Let , vol.89 , pp. 151123
    • Faifer, V.N.1    at al2
  • 15
    • 50849144745 scopus 로고    scopus 로고
    • V.Vervisch et al, JVST B, 2007.
    • V.Vervisch et al, JVST B, 2007.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.