Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz

ECS Transactions

Volumn 1, Issue 2, 2006, Pages 44-49

  Fung, A K ^a   Samoska, L ^a   Velebir, J ^a   Siegel, P ^a   Rodwell, M ^b   Paidi, V ^b   Griffith, Z ^b   Malik, R ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of California   (United States)

^c RJM Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); SEMICONDUCTING INDIUM COMPOUNDS;

CURRENT GAIN CUTOFF FREQUENCY; DHBT AMPLIFIERS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBTS);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 32844473414     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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