Effect of carrier gas species and flow rates on the properties of ZnO thin films prepared by chemical vapor deposition using zinc acetate dihydrate

Applied Surface Science

Volumn 254, Issue 22, 2008, Pages 7464-7468

  Chao, Liang Chiun ^a   Hsieh, Meng Yun ^a   Yang, Shih Hsuan ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Hydrocarbon; Optical properties; SIMS; Zinc oxide

Indexed keywords

ARGON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GASES; HYDROCARBONS; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; ZINC OXIDE;

DEEP LEVEL EMISSION; EMISSION ENERGIES; GREEN EMISSIONS; NEAR BAND EDGE EMISSIONS; RELATIVE CONCENTRATION; SECONDARY ION MASS SPECTROSCOPY; SILICON SUBSTRATES; ZINC ACETATE DIHYDRATE;

FILM PREPARATION;

EID: 50549101482     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.002     Document Type: Article

References (33)

1. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nature 4 (2005) 42
2. Zhu Y.W., Zhang H.Z., Sun X.C., Feng S.W., Xu J., Zhao Q., Xiang B., Wang R.M., and Yu D.P. Appl. Phys. Lett. 83 (2003) 144
3. Rensmo H., Keis K., Lindström H., Soödergren S., Solbrand A., Hagfeldt A., Lindquist S.E., and Muhammed M. J. Phys. Chem. B 101 (1997) 2598
4. Wan Q., Li Q.H., Chen Y.J., Wang T.H., He X.L., and Li J.P. Appl. Phys. Lett. 84 (2004) 3654
5. Özgür U., Alivov Y.I., Liu C., Teke A., Reschchikov M.A., Doǧan S., Avrutin V., Cho S.J., and Morkoç H. J. Appl. Phys. 98 (2005) 041301
6. Chao L.C., Chiang P.C., Yang S.H., Huang J.W., Liau C.C., Chen J.S., and Su C.Y. Appl. Phys. Lett. 88 (2006) 251111
7. Look D.C., Reynolds D.C., Litton C.W., Jones R.L., Eason D.B., and Cantwell G. Appl. Phys. Lett. 81 (2002) 1830
8. Carcia P.F., McLean R.S., Reilly M.H., and Nunes Jr. G. Appl. Phys. Lett. 82 (2003) 1117
9. Prellier W., Fouchet A., Mercey B., Simon Ch., and Raveau B. Appl. Phys. Lett. 82 (2003) 3490
10. Lee J.H., Ko K.H., and Park B.O. J. Cryst. Growth 247 (2003) 119
11. Yao B.D., Chan Y.F., and Wang N. Appl. Phys. Lett. 81 (2002) 757
12. Wu J.J., and Liu S.C. Adv. Mater. 14 (2002) 215
13. Mar L.G., Timbrell P.Y., and Lamg R.N. Thin Solid Films 223 (1993) 341
14. Mar G.L., Timbrell P.Y., and Lamb R.N. Chem. Mater. 7 (1995) 1890
15. Kobayashi K., Matsubara T., Matsushima S., Shirakata S., Isomura S., and Okada G. J. Mater. Sci. Lett. 15 (1996) 457
16. Lu J., Ye Z., Huang J., Wang L., and Zhao B. Appl. Surf. Sci. 207 (2003) 295
17. Meng X., Lin B., Gu B., Zhu J., and Fu Z. Solid State Commun. 135 (2005) 411
18. Maensiri S., Laokul P., and Promarak V. J. Cryst. Growth 289 (2006) 102
19. Su X., Zhang Z., Wang Y., and Zhu M. J. Phys. D: Appl. Phys. 38 (2005) 3934
20. Xia X., Ye Z., Yuan G., Zhu L., and Zhao B. Appl. Surf. Sci. 253 (2006) 909
21. Su X., Zhang Z., and Zhu M. Appl. Phys. Lett. 88 (2006) 061913
22. Lucca D.A., Hamby D.W., Klopfstein M.J., and Cantwell G. Phys. Stat. Sol. 229 (2002) 845
23. Voss T., Bekeny C., Wischmeier L., Gafsi H., Börner S., and Schade W. Appl. Phys. Lett. 89 (2006) 182107
24. Chao L.C., Hu H.T., Yang S.H., and Fang Y.C. Thin Solid Films 516 (2008) 6305
25. Djurišić A.B., Leung Y.H., Tam K.H., Hsu Y.F., Ding L., Ge W.K., Zhong Y.C., Wong K.S., Chan W.K., Tam H.L., Cheah K.W., Kwok M.W., and Phillips D.L. Nanotechnology 18 (2007) 095702
26. Gomi M., Oohira N., Ozaki K., and Koyano M. Jpn. J. Appl. Phys. 42 (2003) 481
27. Studenikin S.A., Golego N., and Cocivera M. J. Appl. Phys. 84 (1998) 2287
28. Zhou H., Alves H., Hofmann D.M., Kriegseis W., Meyer B.K., Kaczmarczyk G., and Hoffmann A. Appl. Phys. Lett. 80 (2002) 210
29. Varshni Y.P. Physica (Amsterdam) 34 (1967) 149
30. Liu Z.W., Ong C.K., Yu T., and Shen Z.X. Appl. Phys. Lett. 88 (2006) 053110
31. Cullity B.D. Elements of X-ray Diffraction. 2nd ed. (1978), Addison-Wesley, Reading, MA p. 102
32. Ghule A.V., Ghule K., Chen C.Y., Chen W.Y., Tzing S.H., Chang H., and Ling Y.C. J. Mass Spectrom. 39 (2004) 1202
33. Ghule A.V., Lo B., Tzing S.H., Ghule K., Chang H., and Ling Y.C. Chem. Phys. Lett. 381 (2003) 262