Influence of annealing on ZnO films and ZnO/p-Si heterojunctions

Guangxue Xuebao/Acta Optica Sinica

Volumn 28, Issue 7, 2008, Pages 1411-1414

  Chen, Chuanxiang ^a   Qi, Hongxia ^a  

^a JINING UNIVERSITY   (China)

Author keywords

Anneal; Photoelectric effect; Pulsed laser deposition; Thin film optics; ZnO p Si

Indexed keywords

DIFFRACTION; ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVES; LEAKAGE CURRENTS; LIGHT; METALLIC FILMS; PHOTODEGRADATION; PHOTOELECTRICITY; POWDERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SILICON; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS; ZINC ALLOYS;

ANNEAL; ANNEALING TEMPERATURE; PHOTOELECTRIC EFFECT; THIN FILM OPTICS; ZNO/P-SI;

ANNEALING;

EID: 50549100860     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: 10.3788/AOS20082807.1411     Document Type: Article

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