메뉴 건너뛰기




Volumn 22, Issue 4, 2004, Pages 2201-2204

Size selection of oxidized GaN crystallites and their cathodoluminescence properties

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CATHODOLUMINESCENCE; ETCHING; NANOSTRUCTURED MATERIALS; OXIDATION; PARTICLE SIZE ANALYSIS; PHOSPHORS; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEDIMENTATION; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 5044238498     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1775198     Document Type: Conference Paper
Times cited : (6)

References (12)
  • 11
    • 0000319688 scopus 로고    scopus 로고
    • edited by J. H. Edgar, S. Stride, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London)
    • K. Nishino and S. Sakai, Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Stride, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, 1999), p. 367.
    • (1999) Gallium Nitride and Related Semiconductors , pp. 367
    • Nishino, K.1    Sakai, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.