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Volumn 188, Issue 2, 2001, Pages 587-590

GaN Growth by Compound Source MBE Using GaN Powder

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EID: 1842635324     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<587::AID-PSSA587>3.0.CO;2-O     Document Type: Article
Times cited : (12)

References (12)
  • 10
    • 0000319688 scopus 로고    scopus 로고
    • Eds. J. H. EDGAR, S. STRIDE, I. AKASAKI, H. AMANO, and C. WETZEL, INSPEC, London
    • K. NISHINO and S. SAKAI, Gallium Nitride and Related Semiconductors, Eds. J. H. EDGAR, S. STRIDE, I. AKASAKI, H. AMANO, and C. WETZEL, INSPEC, London 1999 (p 367).
    • (1999) Gallium Nitride and Related Semiconductors , pp. 367
    • Nishino, K.1    Sakai, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.