Challenges of manufacturing capacitor oxide in mixed signal ASICS

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn , Issue , 2006, Pages 360-363

  Towner, Janet M ^a   Naughton, John J ^a   Huett, Tom ^a  

^a ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; APPLICATION SPECIFIC INTEGRATED CIRCUITS; AUTOMATION; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ELECTROSTATICS; ENERGY STORAGE; MAGNETIC FIELD EFFECTS; MAGNETISM; MAGNETOHYDRODYNAMICS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; POLYSILICON; SEMICONDUCTOR MATERIALS; SUBSTRATES;

DC BIASING; DOPED SUBSTRATES; ELECTROSTATIC CHARGE; INITIAL PHASE; INTERNATIONAL SYMPOSIUM; MIXED SIGNALS; MIXED-SIGNAL APPLICATIONS; PLASMA INSTABILITIES; POLYSILICON CAPACITORS; RF POWERING; SEMICONDUCTOR MANUFACTURING; SUBSTRATE RESISTANCE; THICKNESS UNIFORMITY; WAFER HANDLING;

PLASMA STABILITY;

EID: 50249184781     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.2006.4493107     Document Type: Conference Paper

References (8)

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