Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthoslllcate films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1224-1229

  Lan, Jin Kun ^a,b   Wang, Ylng Lang ^b,c   Chao, Chuen Guang ^a   Lo, Kuang Yao ^c   Cheng, Yi Lung ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION RATE;

ALUMINUM; ELECTRIC CHARGE; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICA; SILICATES; SURFACE PROPERTIES; TITANIUM NITRIDE;

DIELECTRIC FILMS;

EID: 0141681380     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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