Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 81-83

  Aimadeddine, M ^a   Arnal, V ^a   Roy, D ^a   Farcy, A ^a   David, T ^b   Chevolleau, T ^c   Posseme N ^b   Vitiello, J ^d   Chapelon, L L ^a   Guedj, C ^b   Brechet, Y ^e   Volpi, F ^e   Torres, J ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c CNRS   (France)

^d NXP SEMICONDUCTORS   (Netherlands)

^e GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

METHANE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TECHNOLOGY;

ASH CHEMISTRY; CRITICAL STEPS; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; POROUS DIELECTRICS; POROUS ULTRA LOW-K; SEALING EFFECT;

DIELECTRIC MATERIALS;

EID: 50249182950     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648652     Document Type: Conference Paper

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6. S.M. Sze, Edition J.Wiley & Sons, "Physics of semiconductor devices".
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8. J.S. Tsai et al. Proceedings of IITC 2005, pp. 94-96.