Ring contact electrode process for high density phase change random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2001-2005

  Ryoo, Kyung Chang ^a   Song, Yoon Jong ^a   Shin, Jae Min ^a   Park, Sang Su ^a   Lim, Dong Won ^a   Kim, Jae Hyun ^a   Park, Woon Ik ^a   Sim, Ku Ri ^a   Jeong, Ji Hyun ^a   Kang, Dae Hwan ^a   Kong, Jun Hyuck ^a   Jeong, Chang Wook ^a   Oh, Jae Hee ^a   Park, Jae Hyun ^a   Kim, Jeong In ^a   Oh, Yong Tae ^a   Kim, Ji Sun ^a   Eun, Seong Ho ^a   Lee, Kwang Woo ^a   Koh, Seong Pil ^a   Fai, Yung ^a   Koh, Gwan Hyob ^a   Jeong, Gi Tae ^a   Jeong, Hong Sik ^a   Kim, Kinam ^a   more..

^a SAMSUNG Electronics   (South Korea)

Author keywords

Core dielectrics; High density; PRAM; Reset current; Ring type BEC

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRODES; PHASE CHANGE MATERIALS;

BOTTOM ELECTRODE CONTACT (BEC); CORE DIELECTRICS; HIGH DENSITY PHASE CHANGE RANDOM ACCESS MEMORY; RESET CURRENT;

RANDOM ACCESS STORAGE;

EID: 34547914911     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2001     Document Type: Article

References (3)

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