A novel programming method to refresh a long-cycled phase change memory cell

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 46-48

  Lee, Suyoun ^a   Jeong, Jeung Hyun ^a   Taek, Sung Lee ^a   Won, Mok Kim ^a   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Cycling endurance; Field induced atomic migration; Phase change memory

Indexed keywords

CURING; DRYING; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; SULFATE MINERALS; TECHNOLOGY;

ATOMIC MIGRATION; CYCLING ENDURANCE; FIELD-INDUCED ATOMIC MIGRATION; INTERNATIONAL CONFERENCES; LIFE-TIME; MEMORY TECHNOLOGY; NON-VOLATILE; PHASE CHANGE MEMORY CELLS; PHASE-CHANGE MEMORIES; RESET CURRENTS; SEMICONDUCTOR MEMORIES;

PHASE CHANGE MEMORY;

EID: 50249162067     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.19     Document Type: Conference Paper

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