Optimal capping layer thickness for stacked quantum dots

Physical Review Letters

Volumn 101, Issue 8, 2008, Pages

  Niu, X B ^a   Lee, Y J ^a,b   Caflisch, R E ^a   Ratsch, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; EPITAXIAL GROWTH; LEVEL MEASUREMENT; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS;

ATOMISTIC STRAIN; CAPPING LAYER; COMPUTATIONAL APPROACH; EFFECT OF STRAIN; GROWTH OF ISLANDS; LEVEL-SET METHOD; MICROSCOPIC PARAMETERS; NANOSCALE PATTERNING; NUCLEATION SITES; OPTIMAL CAPPING; OPTIMAL THICKNESS; SELF ORGANIZATIONS; STACKED QUANTUM DOTS; UNIFORM SIZE DISTRIBUTION; VERTICAL ALIGNMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 50249141751     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.086103     Document Type: Article

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