Simultaneous hot-hole injection at drain and source for efficient erase and excellent endurance in SONOS flash EEPROM cells

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 260-262

  Cho, Myung Kwan ^a   Kim, Dae M ^b  

^a SAMSUNG Electronics   (South Korea)

^b Korea Institute for Advanced Study   (South Korea)

Author keywords

Erase in SONOS; Hot hole injection for erase; SONOS memory cell

Indexed keywords

ASPECT RATIO; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; HOT CARRIERS; NITRIDES; OXIDES; SEMICONDUCTOR STORAGE; SILICON WAFERS; THRESHOLD VOLTAGE;

FOWLER-NORDHEIM TUNNELING; HOT HOLE INJECTION; SILICON OXIDE NITRIDE OXIDE SILICON FLASH MEMORY CELLS;

PROM;

EID: 0038443508     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.810887     Document Type: Letter

References (7)

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