A plasma enhanced chemical vapor deposition process to achieve branched carbon nanotubes

Carbon

Volumn 46, Issue 12, 2008, Pages 1611-1614

  Abdi, Y ^a   Mohajerzadeh, S ^a   Koohshorkhi, J ^a   Robertson, M D ^b   Andrei, C M ^c  

^a UNIVERSITY OF TEHRAN   (Iran)

^b ACADIA UNIVERSITY   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50249113266     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2008.06.059     Document Type: Letter

References (7)

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2. Suehiro J., Zhou G., and Hara M. Fabrication of a carbon nanotube-based gas sensor using dielectrophoresis and its application for ammonia detection by impedance spectroscopy. J Phys D: Appl Phys 36 (2003) 109-114
3. Nguyen C., Stevens R., Barber J., Han J., Sanchez M., Larson C., et al. Carbon nanotube scanning probe for profiling of deep ultraviolet and 193 nm photoresist patterns. Appl Phys Lett 81 5 (2002) 901-903
4. Meyyappan M., Delziet L., Cassell A., and Hash D. Carbon nanotube growth by PECVD: a review. Plasma Sources Sci Technol 12 (2003) 205-216
5. Hofmann S., Ducati C., Kleinsorge B., and Robertson J. Low temperature growth of carbon nanotubes by plasma enhanced chemical vapor deposition. Appl Phys Lett 83 1 (2001) 135-137
6. Koohsorkhi J., Abdi Y., Mohajerzadeh S., Hoseinzadegan H., and Asl Soleimani E. Fabrication of self-defined gated field emission devices on silicon substrates using PECVD-grown carbon nanotubes. Carbon 44 (2006) 2797-2804
7. Chhowalla M., Teo K.B.K., Ducati C., Rupesinghe N.L., Amaratunga G.A.J., Ferrari A.C., et al. Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition. J Appl Phys 90 10 (2001) 5308-5317