Time-resolved characterization of InAsPInP quantum dots emitting in the C -band telecommunication window

Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages

  Hostein, R ^a   Michon, A ^a   Beaudoin, G ^a   Gogneau, N ^a   Patriache, G ^a   Marzin, J Y ^a   Robert Philip, I ^a   Sagnes, I ^a   Beveratos, A ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; VAPOR PHASE EPITAXY;

CARRIER CONFINEMENTS; EXCITON LIFETIME; LOW TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; MICRO-PHOTOLUMINESCENCE; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DOTS; QUANTUM DOTS EMITTING; ROOM TEMPERATURES; TELECOMMUNICATION WINDOW; TIME-RESOLVED; TIME-RESOLVED CHARACTERIZATION;

DYNAMIC RESPONSE;

EID: 50249090922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965112     Document Type: Article

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