An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2008, Pages 327-330

  Pal, P ^a   Sato, K ^a   Gosalvez, M A ^b   Shikida, M ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANISOTROPIC ETCHING; ANISOTROPY; COMPOSITE MICROMECHANICS; ETCHING; ETHERS; MECHANICAL ENGINEERING; MECHANICS; MECHATRONICS; MEMS; MICROELECTROMECHANICAL DEVICES; NANOFLUIDICS; NONMETALS; OPTICAL DESIGN; ORGANIC COMPOUNDS; REACTIVE ION ETCHING; SILICON; SILICON WAFERS; SURFACE ACTIVE AGENTS;

ANISOTROPIC WET ETCHING; CMOS-COMPATIBLE; CONVEX CORNERS; ETCHING CHARACTERISTICS; ETCHING MASKS; INTERNATIONAL CONFERENCES; MESA STRUCTURES; MICRO-ELECTRO MECHANICAL SYSTEMS; MICRO-FLUIDIC CHANNELS; NON-IONIC SURFACTANTS; POLY OXY ETHYLENE; SILICON MICROSTRUCTURES; SMOOTH SURFACES; TETRA-METHYL AMMONIUM HYDROXIDE; V-GROOVES;

WET ETCHING;

EID: 50149094279     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2008.4443659     Document Type: Conference Paper

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