Influence of the electron irradiation on I-V characteristics of ZnO nanowires

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology

Volumn 28, Issue 4, 2008, Pages 303-307

  Wei, Bin ^a   Ji, Yuan ^a   Wang, Li ^a   Zhang, Yinqi ^a   Zhang, Xiaoling ^a   Lu, Changzhi ^a   Zhang, Yuefei ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electron beam irradiation; I V curves; SEM; ZnO nanowire

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; IMAGING TECHNIQUES; IRRADIATION; METALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OPTICAL DESIGN; PARTICLE BEAMS; PHOTODETECTORS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TUNGSTEN; ZINC ALLOYS; ZINC OXIDE;

CARRIER DENSITY; ELECTRON BEAM IRRADIATION; ELECTRON-BEAM; I-V CHARACTERISTICS; I-V CURVES; IN-SITU; METAL-SEMICONDUCTOR- METAL; NANO-METER SCALE; SCANNING ELECTRON MICROSCOPY (SEM); SEM; TOTAL RESISTANCE; TUNGSTEN ELECTRODES; ZNO NANOWIRE; ZNO NANOWIRES;

ELECTRON IRRADIATION;

DETECTORS; ELECTRON BEAMS; ELECTRONS; LITHOGRAPHY; RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; ZINC COMPOUNDS; ZINC OXIDE;

EID: 50049114996     PISSN: 16727126     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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