A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 6, 2007, Pages 1971-1975

  Pirasteh, P ^a   Boucher, Y G ^a   Charrier, J ^b   Dumeige, Y ^b  

^a ENIB/RESO EA 3380   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED SURFACE; COMPLEX PERMITTIVITY; EXPERIMENTAL DATA; IMAGINARY PARTS; NEW APPROACHES; POROUS SILICON LAYERS; REFLECTOMETRY; SURFACE LOSSES; TRANSFER MATRIX;

ABSORPTION; CEMENTS; CHLORINE COMPOUNDS; MATRIX ALGEBRA; NONMETALS; PERMITTIVITY; POROUS SILICON; REFLECTION; REFLECTOMETERS; SILICON; TRANSFER MATRIX METHOD;

SURFACE ANALYSIS;

EID: 49749142998     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674345     Document Type: Conference Paper

References (12)

1. H. F. Arrand, T. M. Benson, A. Loni, M. G. Krüger, M. Thönissen, and H. Lüth, Electron. Lett. 33(20), 1724 (1997).
2. G. Lérondel, M. Thönissen, R. Romestain, and J. C. Vial, Appl. Phys. Lett. 71(2), 196 (1997).
3. S. Hilbrich, R. Arens-Fischer, L. Küpper, W. Theiss, M. G. Berger, M. Krüger, and M. Thönissen, Thin Solid Films 297(1), 250 (1997).
4. W. Theiss, Surf. Sci. Rep. 29, 91-192 (1997).
5. G. Lérondel and R. Romestain, Appl. Phys. Lett. 74(19), 2740-2742 (1999).
6. V. Chamard, G. Dolino, and F. Muller, J. Appl. Phys. 84(12), 6659 (1998).
7. EMIS Data Reviews Series No. 4, INSPEC (1988).
8. D. E. Aspnes, Thin Solid Films 89, 249-262 (1982).
9. Y. Boucher, IEEE J. Quantum Electron. 33(2), 265-268 (1997).
10. J. Faist, J.-D. Ganière, Ph. Buffat, S. Sampson, and F.-K. Reinhart, J. Appl. Phys. 66(3), 1023-1032 (1989).
11. V. I. Kozlovsky, P. A. Trubenko, Yu. V. Korostelin, and V. V. Roddatis, Phys. Tech. Poluprov. (in Russian) 34(10), 1237-1243 (2000).
12. G. Lérondel, R. Romestain, and S. Barret, J. Appl. Phys. 81(9), 6171-6178 (1997).