Band gap widening of MBE grown InN layers by impurity incorporation

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 402-405

  Uesaka, Y ^a   Yamamoto, A ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; MOLECULAR BEAM EPITAXY; NITRIDES; OXYGEN; SEMICONDUCTOR MATERIALS;

ABSORPTION EDGE; BAND GAP; INN LAYERS; RESIDUAL CARRIER CONCENTRATION;

INDIUM COMPOUNDS;

EID: 18444389505     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.009     Document Type: Conference Paper

References (6)

1. V.Yu. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul Phys. Stat. Sol. (b) 229 2002 R1
2. Y. Nanishi, Y. Saito, T. Yamaguchi, M. Hori, F. Matsuda, T. Araki, A. Suzuki, and T. Miyajima Phys. Stat. Sol. (a) 200 2003 202
3. A. Yamamoto, K. Sugita, H. Takatsuka, A. Hashimoto, and V.Yu. Davydov J. Crystal Growth 261 2004 275
4. A.G. Bhuiyan, K. Sugita, K. Kasashima, and A. Hashimoto J. Appl. Phys. 83 2003 23
5. S. Yonemura, T. Yaguchi, H. Tsuchiya, N. Shimoyama, T. Suemasu, and F. Hasegawa J. Crystal Growth 188 1998 81
6. M. Yamada, and Y. Ide Surf. Sci. 339 1995 L914