Conductivity of free-standing porous silicon layers using Terahertz Differential Time-Domain spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 6, 2007, Pages 2111-2115

  Ramani, S ^a   Cheville, Alan ^a   Garcia, J Escorcia ^b   Agarwal, V ^b  

^a Oklahoma State University   (United States)

^b UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED SURFACE; POROUS SILICON LAYERS; POWER LAWS; TERAHERTZ; TERAHERTZ FREQUENCIES; TIME-DOMAIN SPECTROSCOPY;

CEMENTS; FREQUENCY RESPONSE; NONMETALS; REFLECTOMETERS; SILICON; SURFACE ANALYSIS; TIME DOMAIN ANALYSIS;

POROUS SILICON;

EID: 49749128387     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674393     Document Type: Conference Paper

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