Effect of CO on characteristics of AlGaN/GaN Schottky diode

Chinese Physics Letters

Volumn 25, Issue 8, 2008, Pages 3025-3027

  Feng, Chun ^a   Wang, Xiao Liang ^b   Yang, Cui Bai ^b   Xiao, Hong Ling ^b   Zhang, Ming Lan ^b   Jiang, Li Juan ^b   Tang, Jian ^b   Hu, Guo Xin ^b   Wang, Jun Xi ^b   Wang, Zhan Guo ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; SCHOTTKY BARRIER DIODES;

AIR AMBIENT; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALGAN/GAN SCHOTTKY DIODES; CO DETECTION; EFFECT OF CO; OXYGEN MOLECULE; SCHOTTKY DIODE GAS SENSORS; SCHOTTKY-BARRIER HEIGHTS; SENSOR SIGNALS; TRANSISTOR STRUCTURE;

DIODES;

EID: 49749106614     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/8/078     Document Type: Article

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