Low-temperature scanning tunneling microscopy of subsurface shallow dopants: Depth dependence of the corrugation for the GaAs(110) surface

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 8, 2001, Pages

  Depuydt, A ^a   Van Haesendonck, C ^a   Savinov, S V ^b   Panov, V I ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; TEMPERATURE;

ELECTRON CARRIER CONCENTRATION; FRIEDEL CHARGE DENSITY OSCILLATIONS; HALL MEASUREMENT;

SCANNING TUNNELING MICROSCOPY;

EID: 0034856391     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100659     Document Type: Article

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