Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Angelova, T ^a   Cros, A ^a   Cantarero, A ^a   Fuster, D ^b   Gonzalez Y ^b   Gonzalez L ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC PHYSICS; CONTINUUM MECHANICS; EQUATIONS OF STATE; INDIUM ARSENIDE; INDIUM COMPOUNDS; MIXING; NANOSTRUCTURES; NANOWIRES; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; WIRE;

ATOMIC INTERMIXING; CONFINED AND INTERFACE PHONONS; CRITICAL POINT; DIELECTRIC CONTINUUM MODEL; DYNAMIC CALCULATIONS; EXPERIMENTAL DATA; INAS/INP; QUANTUM WIRES; RAMAN STUDIES; RESONANCE EFFECTS; SELF-ASSEMBLED; SPACER LAYER THICKNESSES; SPACER THICKNESSES; STRUCTURAL CHARACTERISTICS; VIBRATIONAL MODES;

ATOMS;

EID: 49749103209     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963703     Document Type: Article

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