Reliability analysis of thin HfO2/SiO2 gate dielectric stack

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Volumn , Issue , 2007, Pages 142-145

  Samanta, Piyas ^b,c   Zhu, Chunxiang ^a,d   Chan, Mansun ^a,b  

^a IEEE

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c VIDYASAGAR COLLEGE   (India)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Charge trapping; HfO2; MOS; TDDB

Indexed keywords

CHARGE TRAPPING; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; LOW-K DIELECTRIC; MOLYBDENUM; SILICA; SILICON;

CONSTANT CURRENT STRESS; CONSTANT VOLTAGE STRESS; ELECTRICAL CHARACTERISTIC; GATE DIELECTRIC STACKS; HFO2; TDDB; TIME DEPENDENT DIELECTRIC BREAKDOWN; VARYING THICKNESS;

RELIABILITY ANALYSIS;

EID: 49749094040     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWPSD.2007.4472471     Document Type: Conference Paper

References (7)

1. W. J. Zhu, T. P. Ma. S. Zafar, and T. Tamagawa, "Charge trapping in ultrathin hafnium oxide," IEEE Electron Device Lett., vol. EDL-23, pp. 597-599, 2002.
2. 2 gate dielectrics with TiN gate electrode," Appl. Phys. Lett., vol. 55, pp. 3525-3527, 2004.
3. 2 gate dielectric stacks," J. Appl. Phys., vol. 91, pp. 10127-10129, 2002.
4. 2 gate dielectric stacks," J. Appl. Phys., vol. 100, pp. 094597-1-094597-9, 2006.
5. 2 stack," Microelec. Engg., vol.84, pp. 1964-1967, 2007.
6. 2O-nitrided oxides," J. Appl. Phys., vol. 79, pp. 1583-1594, 1996.
7. L. Manchanda, J. Vasi, and A. B. Bhattacharya, "The nature of intrinsic hole traps in thermal silicon dioxide," J. Appl. Phys., vol. 52, pp. 4690-4696, 1981.