Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1417-1419

  Harman, J ^a,b   Kabulski, A ^a   Pagan V R ^a   Famouri, P ^a   Kasarla, K R ^a,b   Rodak, L E ^a   Peter Hensel, J ^b   Korakakis, D ^a,b  

^a West Virginia University   (United States)

^b NATIONAL ENERGY TECHNOLOGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ALUMINUM NITRIDE THIN FILMS; DC BIASING; LINEAR DEPENDENCES; PIEZOELECTRIC PROPERTIES; PIEZOELECTRIC RESPONSES; STANDARD METALS; WORK FUNCTIONS;

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; LIGHT METALS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; NITRIDES; PIEZOELECTRICITY; STANDARDS; THICK FILMS;

STRUCTURAL METALS;

EID: 49749092133     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2958253     Document Type: Article

References (9)

1. J. M. Liu, B. Pan, H. Chan, S. Zhu, Y. Zhu, and Z. Liu, Mater. Chem. Phys. 75, 12 (2002).
2. M. Khan and M. Shur, Proc. SPIE 3006, 154 (1997).
3. A. Kondratyev, R. Talalaev, W. Lundin, A. Sakharov, A. Tsatsul'nikov, E. Zavarin, A. Fomin, and D. Sizov, J. Cryst. Growth 272, 1 (2004).
4. J. Han and A. Nurmikko, IEEE J. Sel. Top. Quantum Electron. 8-2, 289 (2002).
5. T. Ko, IEE Proc.: Optoelectron. 153, 212 (2006).
6. A. Kabulski, J. Harman, P. Famouri, and D. Korakakis, MRS Fall 2006 Meeting Proceedings (unpublished).
7. Nanying Yang, " The Growth and Characterization of GaN Quantum Dots.," M.S. thesis, West Virginia University, 2006.
8. J. Edgar, Properties of Group III Nitrides (Institution of Engineering and Technology, 1994), pp. 22-29.
9. F. Martin, P. Muralt, M. Dubois, and A. Pezous, J. Vac. Sci. Technol. A 22-2, 361 (2004).