Statistical evaluation of split gate opportunities for improved 8T/6T column-decoupled SRAM cell yield

Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008

Volumn , Issue , 2008, Pages 702-707

  Kanj, Rouwaida ^a   Joshi, Rajiv ^b   Keunwoo Kim, ^a   Williams, Richard ^c   Nassif, Sani ^a  

^a IBM AUSTIN RESEARCH LABORATORY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BETA RATIOS; DESIGN LIMITATIONS; DEVICE DESIGNS; DOUBLE GATES; ELECTRONIC DESIGNS; FINFET DEVICES; GATE DESIGNS; INTERNATIONAL SYMPOSIUM; LOW VOLTAGES; MACROSCOPIC MODELING; PROCESS VARIATIONS; RANDOM DOPANT FLUCTUATIONS; SPLIT GATES; SRAM CELLS; STATISTICAL ANALYSIS; STATISTICAL ANALYSIS TECHNIQUES; STATISTICAL EVALUATION; THRESHOLD VOLTAGE VARIATIONS; YIELD IMPROVEMENTS;

CMOS INTEGRATED CIRCUITS; COLUMNS (STRUCTURAL); CYTOLOGY; ELECTRONICS ENGINEERING; ESTIMATION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); JOINTS (STRUCTURAL COMPONENTS); PROCESS ENGINEERING; SENSITIVITY ANALYSIS; STATIC RANDOM ACCESS STORAGE; STATISTICAL METHODS; STATISTICS; TECHNOLOGY;

CELLS;

EID: 49749091215     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2008.4479823     Document Type: Conference Paper

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