InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2338-2341

  Hu, F R ^a   Ochi, K ^a   Zhao, Y ^a   Hane, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMN CRYSTALS; FREE SPACES; INGAN/GAN; LOW TEMPERATURES; NANO COLUMNS; NITRIDE SEMICONDUCTORS; QUANTUM WELLS; RAMAN SPECTRUM; SI SUBSTRATE; SURFACE PLANES;

CRYSTAL GROWTH; CRYSTALLOGRAPHY; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; POWDERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES;

CRYSTAL STRUCTURE;

EID: 49749083459     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674734     Document Type: Conference Paper

References (8)

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