Characteristic of Ga-Doped ZnO films deposited by DC magnetron sputtering with a sintered ceramic ZnO:Ga target

Journal of the Korean Physical Society

Volumn 53, Issue 1, 2008, Pages 416-420

  Lee, Jung Chul ^a   Kim, Yang Do ^a   Song, Pung Keun ^a   Lee, Jin Ho ^b   Kim, Young Seok ^c   Son, Chang Sik ^d  

^a Pusan National University   (South Korea)

^b Samsung Corning Co Ltd   (South Korea)

^c Korea Institute of Industrial Technology   (South Korea)

^d Silla University   (South Korea)

Author keywords

DC sputtering; Ga content; Ga doped ZnO; Optical band gap; Photoluminescence

Indexed keywords

EID: 49649117178     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.416     Document Type: Conference Paper

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