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Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 445-450

Electrochemical deposition of ZnO film and its photoluminescence properties

(5) Gao, Y F a,b Nagai, M b Masuda, Y a Sato, F c Koumoto, K a

a NAGOYA UNIVERSITY (Japan)

b TOKYO CITY UNIVERSITY (Japan)

c Noritake Co Limited (Japan)

Author keywords

A1. Band gap; A1. Morphology; A1. Photoluminescence; A2. Electrochemical deposition; A3. ZnO

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ELECTRODEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SUBSTRATES; ZINC OXIDE;

BAND GAP; ELECTROCHEMICAL DEPOSITION METHOD; OXYGEN DEFECTS; WURZITE STRUCTURE;

THIN FILMS;

EID: 29344446104 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.072 Document Type: Article

Times cited : (88)

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