Resonant tunneling effect and tunneling magnetoresistance in GaMnAs quantum-well double-barrier heterostructures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 12, 2006, Pages 4184-4187

  Ohya, S ^a   Hai, P N ^a   Mizuno, Y ^a   Tanaka, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROSTRUCTURES; INTERNATIONAL CONFERENCES; QUANTUM WELLS; TUNNELING EFFECTS; TUNNELING MAGNETORESISTANCE;

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EXCAVATION; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; SPIN DYNAMICS; TUNNELING (EXCAVATION);

CRYSTALS;

EID: 49549111619     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200672882     Document Type: Conference Paper

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