Luminescence of dislocation network in directly bonded silicon wafers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 3025-3029

  Yu, X ^a,b   Kittler, M ^a,b   Vyvenko, O F ^b   Seifert, W ^a,b   Arguirov, T ^a,b   Wilhelm, T ^c   Reiche, M ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c MPI Mikxostrukturphysik   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION DEGREE; DISLOCATION LINES; DISLOCATION NETWORK; ELECTRON BEAM-INDUCED CURRENT; EXTENDED DEFECTS; INTERNATIONAL CONFERENCES; MIS-ORIENTATION ANGLE; TEMPERATURE DEPENDENCES;

CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON OPTICS; EXPLOSIVE ACTUATED DEVICES; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; NONMETALS; PARTICLE BEAMS; SEMICONDUCTOR MATERIALS; SILICON; WAFER BONDING;

SILICON WAFERS;

EID: 49549102025     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675452     Document Type: Conference Paper

References (18)

1. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 64, 2842 (1994).
2. D. Leong, M. Harry, K. J. Reeson, and K. P. Homewood, Nature 387, 868 (1997).
3. C. Spinella, S. Coffa, C. Bongiorno, S. Pannitteri, and M. G. Grimaldi, Appl. Phys. Lett. 76, 173 (2000).
4. A. Polman, G. N. van den Hoven, J. S. Custer, J. H. Shin, R. Serna, and P. F. A. Alkemade, J. Appl. Phys. 77, 1256(1995).
5. M. Reiche, K. Scheerschmidt, D. Conrad, R. Scholz, A. P1öß1, U. Gösele, and K. N. Tu, Inst. Phys. Conf. Ser. 157, 447 (1997).
6. T. Sekiguchi, S. Ito, and A. Kanai, Mater. Sci. Eng. B 91/92, 244 (2002).
7. X. Yu, O. F. Vyvenko, M. Kittler, W. Seifert, T. Arguirov, T. Mtchedlidze, and M. Reiche, Semiconductors 41, 471 (2007).
8. X. Yu, O. F. Vyvenko, M. Reiche, and M. Kittler, Mater. Sci. Eng. C (2007), in print, available online.
9. E. Sveinbjoernsson, S. Bengtsson, J. Weber, and N. Keskitalo, Electrochem. Soc. Proc. 97(36), 264 (1994).
10. X. Yu, T. Arguirov, M. Kittler, M. Ratzke, and M. Reiche, Mater. Sci. Semicond. Proc. 9, 96 (2006).
11. S. Pizzini, E. Leoni, S. Binetti, M. Acciari, A. Le Donne, and B. Pichaud, Solid State Phenom. 95/96, 273 (2004).
12. S. Pizzini, M. Guzzi, E. Grilli, and G. Borionetti, J. Phys.: Condens. Matter 12, 10131 (2000).
13. T. Sekiguchi, V. V. Kveder, and K. Sumino, J. Appl. Phys. 76, 7882 (1994).
14. V. Kveder, M. Kittler, and W. Schröter, Phys. Rev. B 63, 115208 (2001).
15. A. J. Kenyon, E. A. Steinman, C. W. Pitt, D. E. Hole, and V. I. Vdovin, J. Phys.: Condens. Matter 15, 2843 (2003).
16. C. W. Liu, M. J. Chen, I. C. Lin, M. H. Lee, and C. F. Lin, Appl. Phys. Lett. 77, 1111 (2000).
17. T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, J. Appl. Phys. 95, 6486 (2004).
18. M. Kittler, M. Reiche, X. Yu, T. Arguirov, O. F. Vyvenko, W. Seifert, T. Mtchedlidze, G. Gia, and T. Wilhelm, IEDM Conference, San Francisco, 2006.