Studies on dislocation patterning in 6-inch GaAs crystals

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 2934-2939

  Rudolph, P ^a   Frank Rotsc, Ch ^a   Juda, U ^a   Eichler, St ^b   Scheffer Czygan, M ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL FORMATION; CELL PATTERNING; DISLOCATION DENSITIES; DISLOCATION MOTION; DISLOCATION PATTERNING; DOMINANT MECHANISM; ELASTIC STRESSES; EXTENDED DEFECTS; GAAS CRYSTALS; HIGH TEMPERATURES; INTERNATIONAL CONFERENCES; SEMI-INSULATING;

CELL GROWTH; CELLS; CELLULAR MANUFACTURING; CRYSTALLOGRAPHY; CRYSTALS; CYTOLOGY; ELECTRIC CONDUCTIVITY; EXPLOSIVE ACTUATED DEVICES; GALLIUM ALLOYS; POWDERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

DISLOCATIONS (CRYSTALS);

EID: 49549089547     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675439     Document Type: Conference Paper

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