Infrared detector based on modulation-doped quantum-dot structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 11, 2006, Pages 4013-4016

  Mitin, V ^a   Vagidov, N ^a   Sergeev, A ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE TIME; CONDUCTING STATES; ELECTRON DIFFUSION; INTERNATIONAL CONFERENCES; MODULATION DOPING; MODULATION-DOPED; MONTE CARLO MODELLING; PHOTOCONDUCTIVE GAINS; POTENTIAL BARRIERS; QUANTUM DOTS; QUANTUM-DOT STRUCTURES; ROOM TEMPERATURES;

CARRIER LIFETIME; DETECTORS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTRON ABSORPTION; ELECTRONS; ENERGY ABSORPTION; MODULATION; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PHOTOIONIZATION; PHOTONS; QUANTUM ELECTRONICS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SEPARATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49549083530     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200671561     Document Type: Conference Paper

References (10)

1. Lin Jiang, Sheng S. Li, Nien-Tze Yeh et al., Appl. Phys. Lett. 82, 1986 (2003).
2. W. Zhang, H. Lim, M. Taguchi et al., Appl. Phys. Lett. 86, 191103 (2005).
3. P. Bhattacharya, X. H. Su, S. Chakrabarti et al., Appl. Phys. Lett. 86, 191106 (2005).
4. V. Ryzhii, Semicond. Sci. Technol. 11, 759 (1996).
5. J. Phillips, J. Appl. Phys. 91, 4590 (2002).
6. Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakava, Phys. Rev. B 82, 4114 (1999).
7. R. Fereira and G. Bastard, Appl. Phys. Lett. 74, 2818 (1999).
8. V.V. Mitin, V.I. Pipa, A.V. Sergeev et al., Infrared Phys. and Technol. 42, 467 (2001).
9. V. Ryzhii, I. Khmyrova, V. Mitin et al., Appl. Phys. Lett. 78, 3523 (2001).
10. A. Sergeev, V. Mitin, and M. Stroscio, Physica B 316/317, 369 (2002).