Ammonothermal growth of GaN on an over-1-inch seed crystal

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 50-52, 2005, Pages

  Hashimoto, Tadao ^a   Fujito, Kenji ^b   Saito, Makoto ^a,b   Speck, James S ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

Ammonothermal growth; Bulk GaN; Seeded growth; Supercritical ammonia

Indexed keywords

CRYSTAL STRUCTURE; GROWTH (MATERIALS); OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SURFACE PHENOMENA;

AMMONOTHERMAL GROWTH; BULK GAN; SEEDED GROWTH; SUPERCRITICAL AMMONIA;

GALLIUM NITRIDE;

EID: 31844433673     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1570     Document Type: Article

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