Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1713-1715

  Batista, Jerias ^a,b   Mandelis, Andreas ^a   Shaughnessy, Derrick ^a   Li, Bincheng ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; BACKPROPAGATION; BANDWIDTH; CARRIER CONCENTRATION; CRYSTAL DEFECTS; DIFFUSION; INFRARED RADIATION; LASER PULSES; LIGHT ABSORPTION; LIGHT EMISSION; PHASE SHIFT; PHOTODETECTORS; PHOTONS; RADIOMETRY;

CARRIER DENSITY WAVES (CDW); INFRARED PHOTOCARRIER RADIOMETRY; METALLIC CONTAMINATION; THERMAL-WAVE INTERFERENCE;

SILICON WAFERS;

EID: 4944262436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1785289     Document Type: Article

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