InGaAs-on-Si single photon avalanche photodetectors

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1668-1670

  Kang, Y ^a   Lo, Y H ^a   Bitter, M ^b   Kristjansson, S ^b   Pan, Z ^b   Pauchard, A ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Nova Crystals Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM KEY DISTRIBUTION (QKD); SEPARATED ABSORPTION AND MULTIPLICATION (SAM); SINGLE-PHOTON AVALANCHE DIODES (SPAD); SINGLE-PHOTON QUANTUM DETECTION EFFICIENCY (SPQE);

ANTIREFLECTION COATINGS; IMPACT IONIZATION; PHOTODETECTORS; PROBABILITY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SILICON WAFERS; SINGLE MODE FIBERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 4944261898     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1788882     Document Type: Article

References (20)

1. A. Karlsson, M. Bourennane, G. Ribordy, H. Zbinden, J. Brendel, J. Rarity, and P. Tapster, IEEE Circuits Devices Mag. 15, 34 (1999).
2. J. G. Rarity, P. R. Tapster, and P. M. Gorman, J. Mod. Opt. 48, 1887 (2001).
3. K. A. McIntosh, J. P. Donnelly, D. C. Oakley, A. Napoleone, S. D. Calawa, L. J. Mahoney, K. M. Molvar, J. Mahan, R. J. Molnar, E. K. Duerr, G. W. Turner, M. J. Manfra, and B. F. Aull, Proceeding of IEEE/LEOS Annual Meeting, Tucson, 2, 686 (2003).
4. G. Hungerford and D. J. S. Birch, Meas. Sci. Technol. 7, 121 (1996).
5. D. S. Bethune and W. P. Risk, IEEE J. Quantum Electron. 36, 340 (2000).
6. D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
7. N. Namekata, Y. Makino, and S. Inoue, Electron. Commun. Jpn., Part 2: Electron. 86, 10 (2003).
8. H. Zbinden, H. Bechmann-Pasquinucci, N. Gisin, and G. Ribordy, Appl. Phys. B: Lasers Opt. 67, 743 (1998).
9. S. Cova, A. Lacaita, and G. Ripamonti, IEEE Trans. Electron Devices 12, 685 (1991).
10. H. Dautet, P. Deschamps, B. Dion, A. D. MacGregor, D. MacSween, R. J. McIntyre, C. Trottier, and P. P. Webb, Appl. Opt. 32, 3894 (1993).
11. A. R. Hawkins, T. Reynolds, D. R. England, D. I. Babic, M. Mondry, and J. E. Bowers, Proceeding of IEEE/LEOS Annual Meeting, San Francisco, (1995), p. 29.
12. A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, Appl. Phys. Lett. 70, 303 (1997).
13. A. Pauchard, Y. Kang, P. Mages, M. Bitter, D. Sengupta, Z. Pan, S. Hummel, K. L. Yu, and Y. H. Lo, Proceeding of Optical Fiber Communications Conference (OFC2002) Anaheim, (2002), p. 345.
14. Y. Kang, P. Mages, A. R. Clawson, P. K. L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y. H. Lo, IEEE Photonics Technol. Lett. 14, 1593 (2002).
15. A. Pauchard, Z. Pan, M. Bitter, Y. Kang, P. Mages, S. Hummel, P. K. L. Yu, and Y. H. Lo, Proceedings of IEEE Laser and Electro-Optics Society Annual Meeting Glasgow (LEOS'02), 2002, p. 677.
16. Z. Pan, M. Bitter, A. Pauchard, S. Hummel, Y. Kang, P. Mages, K. L. Yu, and Y. H. Lo, Proceeding of Asia-Pacific Optical and Wireless Communications, Beijing (APOC'02) (2002), p. 11.
17. R. J. McIntyre, IEEE Trans. Electron Devices ED-20, 637 (1973).
18. H. Dautet, P. Deschamps, B. Dion, A. D. MacGregor, D. MacSween, R. J. McIntyre, C. Trottier, and P. P. Webb, Appl. Opt. 32, 3894 (1993).
19. A. Lacaita, F. Zappa, S. Cova, and P. Lovati, Appl. Opt. 35, 2986 (1996).
20. P. A. Hiskett, J. M. Smith, G. S. Buller, and P. D. Townsend, Electron. Lett. 37, 1081 (2001).