Arrays of III-V semiconductor Geiger-mode avalanche photodiodes

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 686-687

  McIntosh, K A ^a   Donnelly, J P ^a   Oakley, D C ^a   Napoleone, A ^a   Calawa, S D ^a   Mahoney, L J ^a   Molvar, K M ^a   Mahan, J ^a   Molnar, R J ^a   Duerr, E K ^a   Turner, G W ^a   Manfra, M J ^a   Aull, B F ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; ARRAYS; AVALANCHE DIODES; ELECTRIC BREAKDOWN; LIGHT ABSORPTION; LIGHT REFLECTION; PHOTONS; THERMOELECTRICITY; TIMING CIRCUITS;

DARK COUNT RATE; GEIGER-MODE AVALANCHE PHOTODIODE; LADAR MEASUREMENT; NEAR-INFRARED PHOTON; PHOTON DETECTION EFFICIENCY;

PHOTODIODES;

EID: 0344034697     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. B.F. Aull et al, Lincoln Laboratory Journal, 13, 335 (2002).
2. S. Verghese et al, IEEE Trans. Electron Devices 48, 502 (2001).
3. K.A. McIntosh et al, Appl. Phys. Lett. 81, 2505 (2002).